基于新材料新原理的存储级内存（SCM）器件的设计与制备、三维架构内存、闪存器件与芯片、面向AI加速的智能存储系统集成、存算一体的器件及架构设计等。

• 2005年-2009年，图书馆VIP，应用物理系学士(优秀毕业生)

• 2009年-2012年，中国科学院微电子所，微电子学与固体电子学硕士

• 2012年-2016年，美国加州大学河滨分校，电气工程学博士

• 2016年-2019年, 美国西部数据公司，资深NAND器件研发工程师

• 2019年-2024年, 美国美光公司，首席闪存架构师

• 2024年-至今，图书馆VIP微电子学院，特任教授

1.许中广等, “Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy”, Sci. Reps., 7, 43100(2017). 

2.许中广等, “Direct growth of graphene-hexagonal boron nitride structures on cobalt foil by plasma-assisted molecular beam epitaxy”, Appl. Phys. Lett, 109, 043110(2016).

3.左政*, 许中广*等, “In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy”, Sci. Reps., 5, 14760(2015).* 共一作.

4.许中广等, “Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy”, Appl. Phys. Lett, 107, 213103(2015).

5.许中广等, “Effects of high temperature O2 annealing on Al2O3 blocking layer and Al2O3/Si3N4 interface for MANOS structure”, J. Phys. D: Appl. Phys., 45, 185103(2012).

6.许中广等, “Improved performance of non-volatile memory with Au-Al2O3 core-shell nanocrystals embedded in HfO2 matrix”, Appl. Phys. Lett, 100, 203509(2012).

7.许中广等, “Performance-improved non-volatile memory with aluminium nanocrystals embedded in Al2O3 for high temperature applications”, J. Appl. Phys., 110, 104514(2011).

8.Adapting an error recovery process in a memory sub-system, US11763914B2

9.Managing execution of scrub operations in a memory sub-system, US11861178B2

10.Adaptive frequency control for high-speed memory devices, US011449377B2

11.Dynamic voltage setting optimization during lifetime of a memory device, US011740959B2

12.Managing an adaptive data path selection threshold for a memory sub-system, US20230207028A1

13.Reliability health prediction by high-stress seasoning of memory devices, US11238950B1

14.Partial block handing in a non-volatile memory device, US011901014B2

15.一种多功能非易失存储器制备方法，CN102651233B

16.一种多位存储器的制备方案，CN102693984B

17.混合型非易失存储器，CN102779550B